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Technical content
GROSS DIE PER 4 INCH WAFER 2,630 PROCESS CP608 Power Transistor PNP - Amp/Switch Transistor Chip Process EPITAXIAL PLANAR Die Size 66 x 66 MILS Die Thickness 12.5 ± 1.0 MILS Base Bonding Pad Area 12 x 24 MILS Emitter Bonding Pad Area 11 x 14 MILS Top Side Metalization Al - 50,000Å Back Side Metalization Cr/Ni/Ag - 16,000Å BACKSIDE COLLECTOR www.centralsemi.com R4 (22-March 2010)
Typical Electrical Characteristics www.centralsemi.com R4 (22-March 2010)