CP593 CENTRAL | Alldatasheet
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Technical content
PNP - Amp/Switch Transistor Chip PRINCIPAL DEVICE TYPES 2N4403 2N5366 Process Epitaxial Planar Die Size 19 x 19 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å PROCESS DETAILS
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com GEOMETRY R0 (5- January 2006) GROSS DIE PER 4 INCH WAFER 30,475