CP591 CENTRAL | Alldatasheet
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Semiconductor Corp. TM PROCESS CP591 Small Signal Transistor PNP - Amp/Switch Transistor Chip PRINCIPAL DEVICE TYPES 2N2905A 2N2907A CMPT2907A CMST2907A CXT2907A CZT2907A PN2907A Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å PROCESS DETAILS GEOMETRY BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (1-August 2002) GROSS DIE PER 4 INCH WAFER 30,600
Semiconductor Corp. TM PROCESS CP591 Typical Electrical Characteristics Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (1-August 2002)