CP576 CENTRAL | Alldatasheet
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Power Transistor . . Semiconductor Corp. PNP - Amp/Switch Transistor Chip PROCESS DETAILS Die Thickness 12.5+1.0 MILS Base Bonding Pad Area 38 x 76 MILS Emitter Bonding Pad Area 47x72 MILS Top Side Metalization Al - 50,000A Back Side Metalization Ag - 10,000A GEOMETRY GROSS DIF PER 4 INCH WAFER 240 PRINCIPAL DEVICE TYPES ie MJ15004 BACKSIDE COLLECTOR RO
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Semiconductor Corp. Typical Electrical Characteristics DC Current Gain "ON" Voltage i eeu % I toeare = % : Te= are j A Steams £ > veo 23 tou eteues secre Ig, Collector Current (A) : Ig, Collector Currant (A) Capacitance ‘Sate Operating Area. = = $ I ” | "== i : 108 — at . Vp, Reverse Vohage (Vv) Vice. Collector-Cenitter Voltage (¥) Power Derating Current Gain-Bendwidth Product = = | saint To. Case Temperature ("C} : Ig, Cobector Current (A) Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002)