CP566 CENTRAL | Alldatasheet
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Semiconductor Corp. TM PROCESS CP566 Small Signal Transistor PNP - Silicon Chopper Transistor Chip PRINCIPAL DEVICE TYPES CMPT404A MPS404A Process EPITAXIAL PLANAR Die Size 31.5 x 31.5 MILS Die Thickness 11 MILS Base Bonding Pad Area 7.8 x 6.2 MILS Emitter Bonding Pad Area 8.0 x 5.3 MILS Top Side Metalization Al - 12,000Å Back Side Metalization Au - 10,000Å PROCESS DETAILS
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com BACKSIDE COLLECTOR GEOMETRY R2 (1-August 2002) GROSS DIE PER 4 INCH WAFER 11,380
Semiconductor Corp. TM PROCESS CP566 Typical Electrical Characteristics Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002)