CP527 CENTRAL | Alldatasheet
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Technical content
PNP - Darlington Transistor Die
10 Amp, 80 Volt
MECHANICAL SPECIFICATIONS: Die Size 110 x 110 MILS Die Thickness 10.6 MILS Base Bonding Pad Size 21 x 24 MILS Emitter Bonding Pad Size 24 x 42 MILS Top Side Metalization Al – 20,000Å Back Side Metalization Ni/Ag – 2,000Å/10,000Å Scribe Alley Width 4.3 mils Wafer Diameter 4 INCHES Gross Die Per Wafer 700 R1 (21-October 2014) The CP527 die is a silicon PNP Darlington power transistor designed for high gain amplifi er applications. MAXIMUM RATINGS: (TC=25°C) SYMBOL UNITS Collector-Base Voltage V CBO 80 V Collector-Emitter Voltage V CEO 80 V Emitter-Base Voltage V EBO 5.0 V Continuous Collector Current I C 10 A Operating and Storage Junction Temperature T J, Tstg -65 to +200 °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICEO V CE=80V 1.0 mA IEBO V EB=5.0V 10 mA BVCBO I C=100μA 80 V BVCEO I C=3.0mA 80 V BVEBO I E=5.0mA 5.0 V VCE(SAT) I C=5.0A, IB=10mA 2.0 V VBE(ON) V CE=3.0V, IC=5.0A 2.8 V hFE V CE=3.0V, IC=5.0A 1.0K 20K Cob V CB=10V, IE=0, f=1.0MHz 200 pF www.centralsemi. com
Typical Electrical Characteristics R1 (21-October 2014) www.centralsemi. com