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Technical content
GROSS DIE PER 6 INCH WAFER 95,400 PROCESS CP394R Small Signal MOSFET Transistor N-Channel Enhancement-Mode Transistor Chip Die Size 15.7 x 15.7 MILS Die Thickness 3.9 MILS Gate Bonding Pad Area 3.9 x 3.9 MILS Source Bonding Pad Area 9.1 x 8.1 MILS Top Side Metalization Al-Si - 35,000Å Back Side Metalization Au - 12,000Å www.centralsemi.com R1 (22-March 2010)
Typical Electrical Characteristics www.centralsemi.com R1 (22-March 2010)