CPXXXXSC-SERIES HDSEMI | Alldatasheet

Document overview

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Technical content

Features

H igh Diode Semiconductor SMB Thyristor Surge Suppressors

  • Low switching voltage
  • Low on-state voltage
  • Does not degrade surge capability after multiple surge Events within limit
  • Fails short circuit when surged in excess of ratings
  • Low Capacitance
  • Protect circuit

Applications

junction temperature range Repetitive peak pulse current Parameter Symbol Value Storage temperature range T stg 60 to +150 junction temperature range T j 40 to +150 Repetitive peak pulse current I PP 100 Value Unit 60 to +150 40 to +150 100 A Symbol Parameter V DRM Peak off- state voltage I DRM Off- state current V S Switching voltage I S Switching current V T On- state voltage I T On- state current I H Holding current C O Off- state capacitance Parameter state voltage state current Switching voltage Switching current state voltage state current state capacitance V-I Curve I T I DRM V I S I H V T V DRM V S CPxxxxSC Series

H igh Diode Semiconductor

Electrical Characteristics

I DRM DRM V S S V T @ I T I H C O Marking μA V V mA V A mA pF max max max max max min max CP0080SC 5 6 25 800 4 2.2 30 60 CP-8C CP0220SC 5 18 30 800 4 2.2 30 60 CP22C CP0300SC 5 25 40 800 4 2.2 30 60 CP03C CP0640SC 5 58 77 800 4 2.2 120 60 CP06C CP0720SC 5 65 87 800 4 2.2 120 50 CP07C CP0900SC 5 75 98 800 4 2.2 120 50 CP09C CP1100SC 5 90 130 800 4 2.2 120 50 CP11C CP1300SC 5 120 160 800 4 2.2 120 50 CP13C CP1500SC 5 140 180 800 4 2.2 120 45 CP15C CP1800SC 5 170 220 800 4 2.2 120 45 CP18C CP2300SC 5 190 260 800 4 2.2 120 40 CP23C CP2600SC 5 220 300 800 4 2.2 120 40 CP26C CP3100SC 5 275 350 800 4 2.2 120 35 CP31C CP3500SC 5 320 400 800 4 2.2 120 35 CP35C CP3800SC 5 340 450 800 4 2.2 120 35 CP38C Vs is measured at 100KV/① s ② Off-state capacitance is measured in V DC =2V, V RMS =1V, f=1MHz Series I PP (A) min 2×10us 8×20us 10×360us 10×1000us C 500 400 175 100 Surge Ratings

H igh Diode Semiconductor FIG.1: tr × td pulse waveform PP 100 t r t d t(μs) Peak value tr = rise time to peak value td = decay time to half value Half value FIG.2: Reflow condition Temperature T S(min) T S(max) T L T P tp t L time to peak temperatue Time (t 25 to peak)℃ Ramp-up Ramp-down Preheat Critical Zone T L to T P t s FIG.3: Normalized Vs change vs. junction temperature FIG.4: Normalized DC holding current vs. case temperature I H j )/I H j =25 ) 0.4-40 -20 100 120 140 160 T j ( ) Percent of Vs change(%) 2.0 1.24 T C ( ) -40 -20 100 120 140 160 0.8 1.6 0.6 1.0 1.4 1.8

H igh Diode Semiconductor Dimensions in inches and (millimeters) 0.087 (2.20) 0.071 (1.80) 0.180(4.57) 0.160(4.06) 0.155(3.94) 0.130(3.30) 0.060(1.52) 0.030(0.76) 0.220(5.59) 0.205(5.21) 0.012(0.305) 0.006(0.152) 0.008(0.203)MAX. 0.096(2.44) 0.084(2.13) 4.26 1.8 SMB SMB

Reel Taping Specifications For Surface Mount Devices-SMB H igh Diode Semiconductor