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Technical content
GROSS DIE PER 6 INCH WAFER 24,000 PROCESS CP379X Small Signal MOSFET Transistor N-Channel Enhancement-Mode Transistor Chip PROCESS DETAILS Die Size 31.5 x 31.5 MILS Die Thickness 5.5 MILS Gate Bonding Pad Area 3.9 x 3.9 MILS Source Bonding Pad Area 19.3 x 21.3 MILS Top Side Metalization Al-Si - 35,000Å Back Side Metalization Ti/Ni/Ag - 2,000Å/3,000Å/20,000Å www.centralsemi.com R0 (20-September 2010)
Typical Electrical Characteristics www.centralsemi.com R0 (20-September 2010)