CP372 CENTRAL | Alldatasheet
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Technical content
GROSS DIE PER 8 INCH WAFER 19,400 PROCESS CP372 N-Channel MOSFET Enhancement-Mode MOSFET Chip PROCESS DETAILS Die Size 37 x 63 MILS Die Thickness 7.5 MILS Gate Bonding Pad Area 6.9 x 6.8 MILS Source Bonding Pad Area 30 x 55 MILS Top Side Metalization Al - 40,000Å Back Side Metalization Ti/Ni/Ag - 1,000Å/3,000Å/10,000Å www.centralsemi.com R0 (10-December 2012)
Typical Electrical Characteristics www.centralsemi.com R0 (10-December 2012)