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Technical content
GROSS DIE PER 6 INCH WAFER 123,000 PROCESS CP361R Small Signal MOSFET N-Channel Enhancement-Mode MOSFET Chip Die Size 14.2 x 14.2 MILS Die Thickness 3.9 MILS Gate Bonding Pad Area 3.94 x 3.94 MILS Source Bonding Pad Area 3.94 x 7.08 MILS Top Side Metalization Al-Si - 30,000Å Back Side Metalization Au - 12,000Å www.centralsemi.com R1 (2-September 2010)
Typical Electrical Characteristics www.centralsemi.com R1 (2-September 2010)