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Technical content
GROSS DIE PER 6 INCH WAFER 51,400 PROCESS CP354X Small Signal MOSFET Transistor N-Channel Enhancement-Mode Transistor Chip Process EPITAXIAL PLANAR Die Size 21.7 x 21.7 MILS Die Thickness 5.5 MILS Gate Bonding Pad Area 4.7 x 4.7 MILS Source Bonding Pad Area 4.7 x 10.2 MILS Top Side Metalization Al-Si - 37,000Å Back Side Metalization Au - 12,000Å www.centralsemi.com R2 (22-March 2010)
Typical Electrical Characteristics www.centralsemi.com R2 (22-March 2010)