CP348-2N5154 CENTRAL | Alldatasheet

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NPN - High Current Transistor Die Die Size 82 x 82 MILS Die Thickness 9.1 MILS Base Bonding Pad Size 13 x 17 MILS Emitter Bonding Pad Size 13 x 25 MILS Top Side Metalization Al-Si – 40,000Å Back Side Metalization Ti/Ni/Ag – 2,000Å/3,000Å/20,000Å Scribe Alley Width 2.0 MILS Wafer Diameter 5 INCHES Gross Die Per Wafer 2,449 The CP348-2N5154 is a silicon NPN transistor designed for high current applications. MECHANICAL SPECIFICATIONS: MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL UNITS Collector-Base Voltage V CBO 100 V Collector-Emitter Voltage V CEO 80 V Emitter-Base Voltage V EBO 6.0 V Continuous Collector Current I C 2.0 A Peak Collector Current I CM 10 A Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICES V CE=60V 1.0 µA ICES V CE=100V 1.0 mA ICEO V CE=40V 50 µA IEBO V EB=5.0V 1.0 µA IEBO V EB=6.0V 1.0 mA BVCEO I C=100mA 80 V VCE(SAT) I C=2.5A, IB=250mA 0.75 V VCE(SAT) I C=5.0A, IB=500mA 1.5 V VBE(SAT) I C=2.5A, IB=250mA 1.45 V VBE(SAT) I C=5.0A, IB=500mA 2.2 V VBE(ON) V CE=5.0V, IC=250mA 1.45 V hFE V CE=5.0V, IC=50mA 50 hFE V CE=5.0V, IC=2.5A 70 200 hFE V CE=5.0V, IC=5.0A 40 hfe V CE=5.0V, IC =0.1A, f=1.0kHz 50 Cob V CB=10V, IE=0, f=1.0MHz 250 pF ton V CC=30V, IC=5.0A, IB1=0.5A 0.5 µs toff V CC=30V, IC=5.0A, IB1=IB2=0.5A 1.3 µs R0 (6-June 2016) www.centralsemi. com

Typical Electrical Characteristics R0 (6-June 2016) www.centralsemi. com

WN: Full wafer, unsawn, 100% tested with reject die inked. (example: CP211-PART NUMBER-WN) SAWN WAFER ON PLASTIC RING WR: Full wafer, sawn and mounted on plastic ring, 100% tested with reject die inked. (example: CP211-PART NUMBER-WR) Please note: Sawn Wafer on Metal Frame (WS) is possible as a special order. Please contact your Central Sales Representative at 631-435-1110. Visit the Central website for a complete listing of specifications: www.centralsemi.com/bdspecs BARE DIE IN TRAY (WAFFLE) PACK CT: Singulated die in tray (waffle) pack. (example: CP211-PART NUMBER-CT) CM: Singulated die in tray (waffle) pack 100% visually inspected as per MIL-STD-750, (method 2072 transistors, method 2073 diodes). (example: CP211-PART NUMBER-CM) R2 (3-April 2017) www.centralsemi.com

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