CP341V CENTRAL | Alldatasheet
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NPN - Low VCE(SAT) Transistor Chip PRINCIPAL DEVICE TYPES CMLT3410 CMPT3410 CMST3410 CMUT3410 Process Epitaxial Planar Die Size 18 x 18 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.8 x 3.8 MILS Emitter Bonding Pad Area 3.8 x 3.8 MILS Top Side Metalization Al/Si - 30,000Å Back Side Metalization Au - 12,000Å PROCESS DETAILS
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com GEOMETRY R0 (5- January 2006) GROSS DIE PER 5 INCH WAFER 54,330