CP337V CENTRAL | Alldatasheet
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145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CP337V Small Signal Transistors NPN - Saturated Switch Transistor Chip PRINCIPAL DEVICE TYPES 2N3725A 2N4014 GEOMETRY PROCESS DETAILS BACKSIDE COLLECTOR R0 (26-August 2005) Process EPITAXIAL PLANAR Die Size 29 x 29 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 11.8 x 4.5 MILS Emitter Bonding Pad Area 11.8 x 4.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å GROSS DIE PER 4 INCH WAFER 13,192