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Technical content
NPN - High Voltage Transistor Chip GEOMETRY PRINCIPAL DEVICE TYPES GROSS DIE PER 5 INCH WAFER 57,735 PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 17.3 x 17.3 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.9 x 3.9 MILS Emitter Bonding Pad Area 3.9 x 3.9 MILS Top Side Metalization Al-Si - 30,000Å Back Side Metalization Au - 12,000Å CMPT5551 CTLT5551-M832D CXT5551 CZT5551 CZT5551E www.centralsemi.com R1 (26-October 2010)
Typical Electrical Characteristics www.centralsemi.com R1 (26-October 2010)