CP329V CENTRAL | Alldatasheet
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NPN- Silicon Darlington Transistor Chip PRINCIPAL DEVICE TYPES CMPTA29 CZTA29 MPSA29 GEOMETRY PROCESS DETAILS R0 (20 -January 2006) Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 4.2 x 4.2 MILS Emitter Bonding Pad Area 4.3 x 4.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 13,000Å
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com GROSS DIE PER 4 INCH W AFER 15,980