CP323 CENTRAL | Alldatasheet
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Semiconductor Corp. TM PROCESS CP323 Small Signal Transistor NPN - Darlington Transistor Chip PRINCIPAL DEVICE TYPES BSS52 BST52 GEOMETRY PROCESS DETAILS R1 (1-August 2002) Process EPITAXIAL PLANAR Die Size 26.8 x 26.8 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 4.2 x 4.2 MILS Emitter Bonding Pad Area 4.3 x 4.3 MILS Top Side Metalization Al - Back Side Metalization Au - 18,000Å
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com GROSS DIE PER 4 INCH W AFER 15,900
Semiconductor Corp. TM PROCESS CP323 Typical Electrical Characteristics Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (1-August 2002)