CP322-CZT3120 CENTRAL | Alldatasheet

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Technical content

NPN - Power Transistor Die

3.0 Amp, 70 Volt

Die Size 66.9 x 66.9 MILS Die Thickness 9.05 MILS Base Bonding Pad Size 11.8 x 17.7 MILS Emitter Bonding Pad Size 11.8 x 17.7 MILS Top Side Metalization Al - 26,000Å Back Side Metalization Ti - 2,200Å Ni - 6,300Å Ag - 11,300Å Scribe Alley Width 1.97 MILS Wafer Diameter 5 INCHES Gross Die Per Wafer 3,620 The CP322-CZT3120 die is a silicon power transistor designed for both power and high-speed switching applications. MECHANICAL SPECIFICATIONS: MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 70 V Emitter-Base Voltage VEBO 7.0 V Continuous Collector Current IC 3.0 A Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICBO V CB=80V 1.0 µA IEBO V EB=5.0V 1.0 µA BVCBO I C=50µA 120 160 V BVCEO I C=10mA 70 90 V BVEBO I E=50µA 7.0 15 V VCE(SAT) I C=2.0µA, IB=200mA 250 500 mV VBE(ON) V CE=1.0V, IC=2.0A 0.95 1.1 V hFE V CE=5.0V, IC=10mA 100 170 hFE V CE=5.0V, IC=500mA 100 165 300 hFE V CE=5.0V, IC=3.0A 40 75 fT VCE=10V, IC=500mA, f=1.0MHz 8.0 MHz R0 (13-May 2022) www.centralsemi. com

WN: Full wafer, unsawn, 100% tested with reject die inked. (example: CP211-PART NUMBER-WN) SAWN WAFER ON PLASTIC RING WR: Full wafer, sawn and mounted on plastic ring, 100% tested with reject die inked. (example: CP211-PART NUMBER-WR) Please note: Sawn Wafer on Metal Frame (WS) is possible as a special order. Please contact your Central Sales Representative at 631-435-1110. Visit the Central website for a complete listing of specifications: www.centralsemi.com/bdspecs BARE DIE IN TRAY (WAFFLE) PACK CT: Singulated die in tray (waffle) pack. (example: CP211-PART NUMBER-CT) CM: Singulated die in tray (waffle) pack 100% visually inspected as per MIL-STD-750, (method 2072 transistors, method 2073 diodes). (example: CP211-PART NUMBER-CM) R2 (3-April 2017) www.centralsemi.com

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