CP322-CJD200 CENTRAL | Alldatasheet
Document overview
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Technical content
NPN - Power Transistor Die
5.0 Amp, 25 Volt
Die Size 66.9 x 66.9 MILS Die Thickness 9.05 MILS Base Bonding Pad Size 11.8 x 17.7 MILS Emitter Bonding Pad Size 11.8 x 17.7 MILS Top Side Metalization Al - 26,000Å Back Side Metalization Ti - 2,200Å Ni - 6,300Å Ag - 11,300Å Scribe Alley Width 1.97 MILS Wafer Diameter 5 INCHES Gross Die Per Wafer 3,620 The CP322-CJD200 die is a silicon power transistor designed for high current amplifier applica- tions. MECHANICAL SPECIFICATIONS: MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 8.0 V Continuous Collector Current IC 5.0 A Peak Collector Current ICM 10 A Continuous Base Current IB 1.0 A Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO V CB=40V 100 nA IEBO V EB=8.0V 100 nA BVCEO I C=10mA 25 V VCE(SAT) I C=500mA, IB=50mA 0.3 V VCE(SAT) I C=2.0A, IB=200mA 0.75 V VCE(SAT) I C=5.0A, IB=1.0A 1.8 V VBE(SAT) I C=5.0A, IB=1.0A 2.5 V VBE(ON) V CE=1.0V, IC=2.0A 1.6 V hFE V CE=1.0V, IC=500mA 70 hFE V CE=1.0V, IC=2.0A 45 180 hFE V CE=2.0V, IC=5.0A 10 fT VCE=10V, IC=100mA, f=10MHz 65 MHz Cob V CB=10V, IE=0, f=0.1MHz 80 pF R0 (13-May 2022) www.centralsemi. com
WN: Full wafer, unsawn, 100% tested with reject die inked. (example: CP211-PART NUMBER-WN) SAWN WAFER ON PLASTIC RING WR: Full wafer, sawn and mounted on plastic ring, 100% tested with reject die inked. (example: CP211-PART NUMBER-WR) Please note: Sawn Wafer on Metal Frame (WS) is possible as a special order. Please contact your Central Sales Representative at 631-435-1110. Visit the Central website for a complete listing of specifications: www.centralsemi.com/bdspecs BARE DIE IN TRAY (WAFFLE) PACK CT: Singulated die in tray (waffle) pack. (example: CP211-PART NUMBER-CT) CM: Singulated die in tray (waffle) pack 100% visually inspected as per MIL-STD-750, (method 2072 transistors, method 2073 diodes). (example: CP211-PART NUMBER-CM) R2 (3-April 2017) www.centralsemi.com
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