DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
GROSS DIE PER 4 INCH WAFER 53,788 PROCESS CP317 Small Signal Transistor NPN - RF Transistor Chip Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 2.4 x 2.2 MILS Emitter Bonding Pad Area 2.4 x 2.2 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å BACKSIDE COLLECTOR www.centralsemi.com R3 (22-March 2010)
Typical Electrical Characteristics www.centralsemi.com R3 (22-March 2010)