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Technical content
GROSS DIE PER 4 INCH WAFER 2,230 PROCESS CP312 Power Transistor NPN - Amp/Switch Transistor Chip Process EPITAXIAL PLANAR Die Size 70 x 70 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 11.4 x 18.1 MILS Emitter Bonding Pad Area 13.8 x 23.6 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Ti/Ni/Ag - 11,300Å www.centralsemi.com R4 (22-March 2010)
Typical Electrical Characteristics www.centralsemi.com R4 (22-March 2010)