CP311 CENTRAL | Alldatasheet
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145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PRINCIPAL DEVICE TYPES CJDD3110 GEOMETRY PROCESS DETAILS R2 (15- September 2003) Process EPITAXIAL PLANAR Die Size 109.5 x 109.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 23.6 x 15.4 MILS Emitter Bonding Pad Area 37.8 x 15.8 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Ti / Ni / Ag - 11,300Å GROSS DIE PER 4 INCH WAFER 900 Central Semiconductor Corp. TM PROCESS CP311 Power Transistor NPN High Voltage Transistor Chip
Semiconductor Corp. TM PROCESS CP311 Typical Electrical Characteristics Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (15- September 2003)