CP310 CENTRAL | Alldatasheet
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Semiconductor Corp. TM PROCESS CP310 Small Signal Transistor NPN - High Voltage Transistor Chip PRINCIPAL DEVICE TYPES 2N3439 2N3440 CMPTA42 CMPTA44 CMPT6517 CXTA44 CZTA42 CZTA44 MPSA42 MPSA44 Process EPITAXIAL PLANAR Die Size 26 x 26 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 6.1 x 4.9 MILS Emitter Bonding Pad Area 5.2 x 5.2 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å PROCESS DETAILS
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Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com BACKSIDE COLLECTOR GEOMETRY R2 (1-August 2002) GROSS DIE PER 4 INCH WAFER 16,880 Central Semiconductor Corp. TM
Semiconductor Corp. TM PROCESS CP310 Typical Electrical Characteristics Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002) Central Semiconductor Corp. TM