CP287 CENTRAL | Alldatasheet
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Semiconductor Corp. TM
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CP287 Power Transistor
8.0 Amp NPN Silicon Power Transistor Chip
R0 (26-July 2005) Die Size 130 x 130 MILS Die Thickness 9.5 MILS Base Bonding Pad Area 37 x 20 MILS Emitter Bonding Pad Area 38 x 20 MILS Top Side Metalization Al - 45,000Å Back Side Metalization Ti/Ni/Ag - (3000Å, 10,000Å, 10,000Å) GROSS DIE PER 4 INCH WAFER 974