CP285 CENTRAL | Alldatasheet
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Semiconductor Corp. TM
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CP285 Power Transistor NPN - Silicon Power Transistor Chip PRINCIPAL DEVICE TYPES MJE13005 GEOMETRY PROCESS DETAILS R0 (20-January 2006) Die Size 105 x 105 MILS Die Thickness 9.5 MILS Base Bonding Pad Area 32 x 22 MILS Emitter Bonding Pad Area 33 x 24 MILS Top Side Metalization Al - 45,000Å Back Side Metalization Ti/Ni/Ag - (3000Å, 10,000Å, 10,000Å) GROSS DIE PER 5 INCH WAFER 1,486