CP273 CENTRAL | Alldatasheet
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Semiconductor Corp. TM PROCESS CP273 Power Transistor NPN- Silicon Power Transistor Chip Central Semiconductor Corp. TM
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (28 -March 2005) PRINCIPAL DEVICE TYPES MJE13003 GEOMETRY PROCESS DETAILS BACKSIDE COLLECTOR Die Size 68 x 68 MILS Die Thickness 8.5 MILS ± 0.6 MILS Base Bonding Pad Area 17.7 x 10.2 MILS Emitter Bonding Pad Area 18.1 x 8.9 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Ag - 14,000Å GROSS DIE PER 4 INCH WAFER 2,440
R1 (28 -March 2005) Central Semiconductor Corp. TM PROCESS CP273 Typical Electrical Characteristics Central Semiconductor Corp. TM Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com