CP268 CENTRAL | Alldatasheet
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Semiconductor Corp. TM
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CP268 Power Transistor NPN - High Voltage Transistor Chip PRINCIPAL DEVICE TYPES BUY49S BSW68 GEOMETRY PROCESS DETAILS R1 (1-August 2002) BACKSIDE COLLECTOR Process EPITAXIAL PLANAR Die Size 63 x 63 MILS Die Thickness 10 MILS Base Bonding Pad Area 9 x 12 MILS Emitter Bonding Pad Area 10 x 18 MILS Top Side Metalization Al - 16,000Å Back Side Metalization Au - 12,000Å GROSS DIE PER 4 INCH WAFER 2,840 Central Semiconductor Corp. TM
Semiconductor Corp. TM PROCESS CP268 Typical Electrical Characteristics Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (1-August 2002) Central Semiconductor Corp. TM