CP264V-2N5457 CENTRAL | Alldatasheet
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Technical content
Die Size 17.1 x 15.1 MILS Die Thickness 7.9 MILS Drain Bonding Pad Size 3.7 MILS DIAMETER Source Bonding Pad Size 3.7 MILS DIAMETER Gate Bonding Pad Size 3.7 MILS DIAMETER Top Side Metalization Al-Si – 17,000Å Back Side Metalization Au – 12,000Å Scribe Alley Width 1.96 MILS Wafer Diameter 5 INCHES Gross Die Per Wafer 59,783 The CP264V-2N5457 is a silicon N-Channel JFET designed for switching and amplifi er applications. MECHANICAL SPECIFICATIONS: MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Drain-Source Voltage V DS 25 V Drain-Gate Voltage V DG 25 V Gate-Source Voltage V GS 25 V Continuous Gate Current I G 10 mA Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS IGSS V GS=15V 1.0 nA IDSS V DS=15V 1.0 5.0 mA BVGSS I G=10µA 25 V VGS(OFF) V DS=15V, ID=10nA 0.5 6.0 V Crss V DS=15V, VGS=0, f=1.0MHz 3.0 pF Ciss V DS=15V, VGS=0, f=1.0MHz 7.0 pF gfs V DS=15V, VGS=0, f=1.0kHz 1.0K 5.0K µS gos V DS=15V, VGS=0, f=1.0kHz 50 µS R0 (30-September 2021) www.centralsemi. com
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