CP257 CENTRAL | Alldatasheet
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Semiconductor Corp. TM PROCESS CP257 Small Signal Transistor NPN - High Voltage Darlington Transistor Chip PRINCIPAL DEVICE TYPES MPSA28 MPSA29 CMPTA29 GEOMETRY PROCESS DETAILS BACKSIDE COLLECTOR R3 (21-September 2003) Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 8.0 MILS Base Bonding Pad Area 4.9 x 4.9 MILS Emitter Bonding Pad Area 6.4 x 6.4 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 16,000Å
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com GROSS DIE PER 4 INCH W AFER 28,250
Semiconductor Corp. TM PROCESS CP257 Typical Electrical Characteristics Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (21-September 2003) Central Semiconductor Corp. TM