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GROSS DIE PER 5 INCH WAFER 2,500 PROCESS CP250 Power Transistor NPN - High Voltage Transistor Chip BACKSIDE COLLECTOR Die Size 99 x 69 MILS Die Thickness 11.6 MILS Base Bonding Pad Area 18 x 21 MILS Emitter Bonding Pad Area 18 x 26 MILS Top Side Metalization Al-Si - 60,000Å Back Side Metalization Ti/Ni/Au - 5,500Å B E www.centralsemi.com R0 (19-July 2010)
Typical Electrical Characteristics www.centralsemi.com R0 (19-July 2010)