CP230 CENTRAL | Alldatasheet
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NPN - Silicon Darlington Transistor Chip PRINCIPAL DEVICE TYPES CZT122 CJD122 Process EPITAXIAL BASE Die Size 80 X 80 MILS Die Thickness 8 MILS Base Bonding Pad Area 18 X 27 MILS Emitter Bonding Pad Area 34 X 34 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Ti/Pd/Ag (20,000Å) PROCESS DETAILS R0 (9 -May 2005) GEOMETRY
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com GROSS DIE PER 4 INCH W AFER 1,445 BACKSIDE COLLECTOR