CP225 CENTRAL | Alldatasheet
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Semiconductor Corp. TM
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CP225 Small Signal Transistor NPN - Amp/Switch Transistor Chip PRINCIPAL DEVICE TYPES 2N2218A 2N2221A GEOMETRY PROCESS DETAILS R1 (1-August 2002) Process EPITAXIAL PLANAR Die Size 19.8 x 19.8 MILS Die Thickness 9.5 MILS Base Bonding Pad Area 4.3 x 4.3 MILS Emitter Bonding Pad Area 4.3 x 4.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å GROSS DIE PER 4 INCH WAFER 28,960 Central Semiconductor Corp. TM
Semiconductor Corp. TM PROCESS CP225 Typical Electrical Characteristics Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (1-August 2002) Central Semiconductor Corp. TM