CP223 CENTRAL | Alldatasheet
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Semiconductor Corp. TM
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CP223 Small Signal Transistor NPN - RF Transistor Chip PRINCIPAL DEVICE TYPES 2N3866 GEOMETRY PROCESS DETAILS BACKSIDE COLLECTOR R1 (1-August 2002) Process EPITAXIAL PLANAR Die Size 22 x 22 MILS Die Thickness 8.0 MILS Base Bonding Pad Area 3.5 MILS DIAMETER Emitter Bonding Pad Area 3.5 x 3.5 MILS Top Side Metalization Al - 30,000 Å Back Side Metalization Au - 12,000Å GROSS DIE PER 4 INCH WAFER 23,340 Central Semiconductor Corp. TM
Semiconductor Corp. TM PROCESS CP223 Typical Electrical Characteristics Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (1-August 2002) Central Semiconductor Corp. TM