CP221 CENTRAL | Alldatasheet
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Semiconductor Corp. TM
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CP221 Small Signal Transistor NPN- High Voltage Darlington Transistor Chip PRINCIPAL DEVICE TYPES CZT2000 Process EPITAXIAL BASE Die Size 39.5 X 39.5 MILS Die Thickness 9.8 MILS Base Bonding Pad Area 3.9 x 5.1 MILS Emitter Bonding Pad Area 7.9 x 3.9 MILS Top Side Metalization Al - 24,000Å Back Side Metalization Au - 12,000Å GEOMETRY PROCESS DETAILS R1 (1-August 2002) GROSS DIE PER 4 INCH WAFER 7,290 Central Semiconductor Corp. TM
Semiconductor Corp. TM PROCESS CP221 Typical Electrical Characteristics Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (1-August 2002) Central Semiconductor Corp. TM