CP214 CENTRAL | Alldatasheet
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NPN - Silicon RF Transistor Chip PRINCIPAL DEVICE TYPES 2N5109 Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.5 MILS Base Bonding Pad Area 2.9 x 3.4 MILS Emitter Bonding Pad Area 2.9 x 3.4 MILS Top Side Metalization Al - 20,000Å Back Side Metalization Au - 16,000Å PROCESS DETAILS
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com BE GEOMETRY R2 (1-August 2002) GROSS DIE PER 4 INCH WAFER 44,460 BACKSIDE COLLECTOR Central Semiconductor Corp. TM
Semiconductor Corp. TM PROCESS CP214 Typical Electrical Characteristics Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002) Central Semiconductor Corp. TM