CP211 CENTRAL | Alldatasheet
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Semiconductor Corp. TM PROCESS CP211 Power Transistor NPN - Amp/Switch Transistor Chip PRINCIPAL DEVICE TYPES 2N3054A CJD41C TIP41C Process EPITAXIAL BASE Die Size 80 x 99 MILS Die Thickness 12.5 MILS Base Bonding Pad Area 12 x 32 MILS Emitter Bonding Pad Area 13 x 48 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Cr/Ni/Ag 16,000Å PROCESS DETAILS GEOMETRY BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (21-September 2003) GROSS DIE PER 4 INCH WAFER 1,450
Semiconductor Corp. TM PROCESS CP211 Typical Electrical Characteristics Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (21-September 2003) Central Semiconductor Corp. TM