CP210-2N4416 CENTRAL | Alldatasheet
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Technical content
Die Thickness 8.0 MILS Drain Bonding Pad Size 3.2 x 4.0 MILS Source Bonding Pad Size 3.2 x 4.0 MILS Gate Bonding Pad Size 3.2 x 4.0 MILS Top Side Metalization Al – 30,000Å Back Side Metalization Au – 6,000Å Scribe Alley Width 3.0 MILS Wafer Diameter 5 INCHES Gross Die Per Wafer 72,000 The CP210-2N4416 is a silicon N-Channel JFET designed for VHF amplifi er and mixer applications. MECHANICAL SPECIFICATIONS: MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Gate-Drain Voltage V GD 30 V Gate-Source Voltage V GS 30 V Drain-Source Voltage V DS 30 V Gate Current I G 10 mA Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS MIN MAX UNITS IGSS V GS=20V, VDS=0 0.1 nA IDSS V DS=20V, VGS=0 5.0 15 mA BVGSS I G=1.0μA 30 V VGS(OFF) V DS=15V, ID=1.0nA 6.0 V gFS V DS=15V, VGS=0, f=1.0kHz 4.5 7.5 mS gOS V DS=15V, VGS=0, f=1.0kHz 50 μS Crss V DS=15V, VGS=0, f=1.0MHz 1.0 pF Ciss V DS=15V, VGS=0, f=1.0MHz 4.0 pF Coss V DS=15V, VGS=0, f=1.0MHz 2.0 pF NF V DS=15V, ID=5.0mA, RG=1.0kΩ, f=100MHz 2.0 dB BACKSIDE GATE R1 G D S R1 (9-February 2016) www.centralsemi. com
Typical Electrical Characteristics R1 (9-February 2016) www.centralsemi. com
Typical Electrical Characteristics www.centralsemi.com R1 (9-February 2016)
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