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Technical content
GROSS DIE PER 4 INCH WAFER 93,430 PROCESS CP207 Small Signal Transistor NPN - Saturated Switch Transistor Chip Process EPITAXIAL PLANAR Die Size 9.0 x 14 MILS Die Thickness 8.0 MILS Base Bonding Pad Area 2.7 x 2.7 MILS Emitter Bonding Pad Area 2.7 x 2.7 MILS Top Side Metalization Al - 13,000Å Back Side Metalization Au - 6,000Å BACKSIDE COLLECTOR www.centralsemi.com R4 (22-March 2010)
Typical Electrical Characteristics www.centralsemi.com R4 (22-March 2010)