CP207 CENTRAL | Alldatasheet
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Semiconductor Corp. TM PROCESS CP207 Small Signal Transistor NPN - Saturated Switch Transistor Chip PRINCIPAL DEVICE TYPES 2N2369A CMPT2369 Process EPITAXIAL PLANAR Die Size 9.0 x 14 MILS Die Thickness 8.0 MILS Base Bonding Pad Area 3.1 x 2.9 MILS Emitter Bonding Pad Area 3.1 x 2.9 MILS Top Side Metalization Al - 13,000Å Back Side Metalization Au - 6,000Å PROCESS DETAILS BACKSIDE COLLECTOR GEOMETRY
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002) GROSS DIE PER 4 INCH WAFER 93,430 Central Semiconductor Corp. TM
Semiconductor Corp. TM PROCESS CP207 Typical Electrical Characteristics Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002) Central Semiconductor Corp. TM