CP206 CENTRAL | Alldatasheet
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Technical content
Die Thickness 8.0 MILS Drain Bonding Pad Area 3.8 X 3.8 MILS Source Bonding Pad Area 3.8 X 3.8 MILS Gate Bonding Pad Area 3.8 X 3.8 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 6,000Å PROCESS DETAILS GEOMETRY BACKSIDE GATE
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (9 -September 2003) GROSS DIE PER 4 INCH WAFER 30,950 Central Semiconductor Corp. TM PROCESS CP206 Small Signal Transistors N - Channel Switch/Chopper J FET Chip
Typical Electrical Characteristics Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (9 -September 2003) Central Semiconductor Corp. TM
Typical Electrical Characteristics Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (9 -September 2003) Central Semiconductor Corp. TM