CP192 CENTRAL | Alldatasheet
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Semiconductor Corp. TM PROCESS CP192 Small Signal Transistor NPN - Amp/Switch Transistor Chip PRINCIPAL DEVICE TYPES 2N3904 CMPT3904 CMST3904 CXT3904 CZT3904 Process EPITAXIAL PLANAR Die Size 13 x 17 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.0 X 3.0 MILS Emitter Bonding Pad Area 3.0 X 3.0 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å PROCESS DETAILS GEOMETRY BACKSIDE COLLECTOR
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Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1 -August 2002) GROSS DIE PER 4 INCH WAFER 52,240 Central Semiconductor Corp. TM
Semiconductor Corp. TM PROCESS CP192 Typical Electrical Characteristics Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1 -August 2002) Central Semiconductor Corp. TM