CP191 CENTRAL | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Semiconductor Corp. TM PROCESS CP191 Small Signal Transistor NPN - Amp/Switch Transistor Chip PRINCIPAL DEVICE TYPES 2N2219A 2N2222A CMPT2222A CMST2222A CXT2222A CZT2222A MD2219A PN2222A Process EPITAXIAL PLANAR Die Size 16.5 x 16.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å PROCESS DETAILS GEOMETRY BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1 -August 2002) GROSS DIE PER 4 INCH WAFER 41,690 Central Semiconductor Corp. TM
Semiconductor Corp. TM PROCESS CP191 Typical Electrical Characteristics Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1 -August 2002) Central Semiconductor Corp. TM