CP188 CENTRAL | Alldatasheet
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Semiconductor Corp. TM PROCESS CP188 Small Signal Transistor NPN - Low Noise Amplifier Transistor Chip PRINCIPAL DEVICE TYPES CMPT2484 CMPT5088 CMPT5089 CMPT6428 CMPT6429 2N2484 Process EPITAXIAL PLANAR Die Size 15 x 15 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area 5.5 x 5.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å PROCESS DETAILS GEOMETRY BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1 -August 2002) GROSS DIE PER 4 INCH WAFER 53,730 Central Semiconductor Corp. TM
Semiconductor Corp. TM PROCESS CP188 Typical Electrical Characteristics Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1 -August 2002) Central Semiconductor Corp. TM