CP176 CENTRAL | Alldatasheet
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Semiconductor Corp. TM PROCESS CP176 Power Transistor NPN - Amp/Switch Transistor Chip PRINCIPAL DEVICE TYPES MJ15003 Process MULTI EPITAXIAL PLANAR Die Size 203 x 227 MILS Die Thickness 12.5 ± 1.0 MILS Base Bonding Pad Area 38 x 76 MILS Emitter Bonding Pad Area 47 x 72 MILS Top Side Metalization Al - 50,000Å Back Side Metalization Ag - 10,000Å PROCESS DETAILS R2 (1 -August 2002) GEOMETRY BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com GROSS DIE PER 4 INCH W AFER 240 Central Semiconductor Corp. TM
Semiconductor Corp. TM PROCESS CP176 Typical Electrical Characteristics Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1 -August 2002)