CP147 CENTRAL | Alldatasheet
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Semiconductor Corp. TM PROCESS CP147 Power Transistor NPN - Darlington Chip PRINCIPAL DEVICE TYPES MJ11012 2N6282 MJ11014 2N6283 MJ11016 2N6284 Process EPITAXIAL BASE Die Size 195 X 195 MILS Die Thickness 12 MILS Base Bonding Pad Area 29 X 29 MILS Emitter Bonding Pad Area 61 X 35 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Ti/Ni/Au - Ni-6,000Å; Au-6,000Å PROCESS DETAILS R3 (1 -August 2002) GEOMETRY BACKSIDE COLLECTOR
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Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com GROSS DIE PER 5 INCH W AFER 280 Central Semiconductor Corp. TM
Semiconductor Corp. TM PROCESS CP147 Typical Electrical Characteristics Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (1 -August 2002) Central Semiconductor Corp. TM