CP127-2N6388 CENTRAL | Alldatasheet
Document overview
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Technical content
NPN - Darlington Transistor Die
10 Amp, 80 Volt
MECHANICAL SPECIFICATIONS: Die Size 110 x 110 MILS Die Thickness 10.6 MILS Base Bonding Pad Size 21 x 24 MILS Emitter Bonding Pad Size 24 x 42 MILS Top Side Metalization Al – 20,000Å Back Side Metalization Ni/Ag – 2,000Å/10,000Å Scribe Alley Width 4.3 MILS Wafer Diameter 4 INCHES Gross Die Per Wafer 700 R0 (28-January 2016) The CP127-2N6388 die is a silicon NPN Darlington power transistor designed for high gain amplifi er applications. MAXIMUM RATINGS: (TC=25°C) SYMBOL UNITS Collector-Base Voltage V CBO 80 V Collector-Emitter Voltage V CEO 80 V Emitter-Base Voltage V EBO 5.0 V Continuous Collector Current I C 10 A Peak Collector Current I CM 15 A Continuous Base Current I B 250 mA Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICEX V CE=80V, VBE=1.5V 300 μA ICEX V CE=80V, VBE(off)=1.5V, TC=125°C 3.0 mA ICEO V CE=80V 1.0 mA IEBO V EB=5.0V 5.0 mA BVCEO IC=200mA 80 V VCE(SAT) IC=5.0A, IB=10mA 2.0 V VCE(SAT) IC=10A, IB=100mA 3.0 V VBE(ON) VCE=3.0V, IC=5.0A 2.8 V VBE(ON) VCE=3.0V, IC=10A 4.5 V hFE VCE=3.0V, IC=5.0A 1.0K 20K hFE VCE=3.0V, IC=10A 100 hfe VCE=5.0V, IC=1.0A, f=1.0kHz 1.0K Cob VCB=10V, IE=0, f=1.0MHz 200 pF www.centralsemi. com
Typical Electrical Characteristics R0 (28-January 2016) www.centralsemi. com
WN: Full wafer, unsawn, 100% tested with reject die inked. (example: CP211-PART NUMBER-WN) SAWN WAFER ON PLASTIC RING WR: Full wafer, sawn and mounted on plastic ring, 100% tested with reject die inked. (example: CP211-PART NUMBER-WR) Please note: Sawn Wafer on Metal Frame (WS) is possible as a special order. Please contact your Central Sales Representative at 631-435-1110. Visit the Central website for a complete listing of specifications: www.centralsemi.com/bdspecs BARE DIE IN TRAY (WAFFLE) PACK CT: Singulated die in tray (waffle) pack. (example: CP211-PART NUMBER-CT) CM: Singulated die in tray (waffle) pack 100% visually inspected as per MIL-STD-750, (method 2072 transistors, method 2073 diodes). (example: CP211-PART NUMBER-CM) R2 (3-April 2017) www.centralsemi.com
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