CP127-2N6045 CENTRAL | Alldatasheet

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Technical content

NPN - Darlington Transistor Die

8.0 Amp, 100 Volt

MECHANICAL SPECIFICATIONS: Die Size 110 x 110 MILS Die Thickness 10.6 MILS Base Bonding Pad Size 21 x 24 MILS Emitter Bonding Pad Size 24 x 42 MILS Top Side Metalization Al – 20,000Å Back Side Metalization Ni/Ag – 2,000Å/10,000Å Scribe Alley Width 4.3 MILS Wafer Diameter 4 INCHES Gross Die Per Wafer 700 R0 (28-January 2016) The CP127-2N6045 die is a silicon NPN Darlington power transistor designed for high gain amplifi er applications. MAXIMUM RATINGS: (TC=25°C) SYMBOL UNITS Collector-Base Voltage V CBO 100 V Collector-Emitter Voltage V CEO 100 V Emitter-Base Voltage V EBO 5.0 V Continuous Collector Current I C 8.0 A Peak Collector Current I CM 16 A Continuous Base Current I B 120 mA Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO V CB=100V 20 μA ICEV V CE=100V, VBE(OFF)=1.5V 20 μA ICEV V CE=100V, VBE(OFF)=1.5V, TC=150°C 200 μA ICEO V CE=100V 20 μA IEBO V EB=5.0V 2.0 mA BVCEO I C=100mA 100 V VCE(SAT) I C=3.0A, IB=12mA 2.0 V VCE(SAT) I C=8.0A, IB=80mA 4.0 V VBE(SAT) I C=8.0A, IB=80mA 4.5 V VBE(ON) V CE=4.0V, IC=4.0A 2.8 V hFE V CE=4.0V, IC=3.0A 1.0K 20 K hFE V CE=4.0V, IC=8.0A 100 hfe VCE=4.0V, IC=3.0A, f=1.0kHz 300 fT V CE=4.0V, IC=3.0A, f=1.0MHz 4.0 MHz Cob V CB=10V, IE=0, f=100kHz 200 pF www.centralsemi. com

Typical Electrical Characteristics R0 (28-January 2016) www.centralsemi. com

WN: Full wafer, unsawn, 100% tested with reject die inked. (example: CP211-PART NUMBER-WN) SAWN WAFER ON PLASTIC RING WR: Full wafer, sawn and mounted on plastic ring, 100% tested with reject die inked. (example: CP211-PART NUMBER-WR) Please note: Sawn Wafer on Metal Frame (WS) is possible as a special order. Please contact your Central Sales Representative at 631-435-1110. Visit the Central website for a complete listing of specifications: www.centralsemi.com/bdspecs BARE DIE IN TRAY (WAFFLE) PACK CT: Singulated die in tray (waffle) pack. (example: CP211-PART NUMBER-CT) CM: Singulated die in tray (waffle) pack 100% visually inspected as per MIL-STD-750, (method 2072 transistors, method 2073 diodes). (example: CP211-PART NUMBER-CM) R2 (3-April 2017) www.centralsemi.com

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