CP117 CENTRAL | Alldatasheet
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Semiconductor Corp. TM PROCESS CP117 Power Transistor NPN - Darlington Chip PRINCIPAL DEVICE TYPES 2N6043 2N6044 2N6045 2N6301 Process EPITAXIAL BASE Die Size 111 X 111 MILS Die Thickness 10 MILS Base Bonding Pad Area 20 X 30 MILS Emitter Bonding Pad Area 20 X 26 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au/Cr/Ni/Au - Ni-6,000Å, Au-6,000Å PROCESS DETAILS R6 (1 -August 2002) GEOMETRY BACKSIDE COLLECTOR
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Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com GROSS DIE PER 5 INCH W AFER 910 Central Semiconductor Corp. TM
Semiconductor Corp. TM PROCESS CP117 Typical Electrical Characteristics Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R6 (1 -August 2002) Central Semiconductor Corp. TM