CP108 CENTRAL | Alldatasheet
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Anode Bonding Pad Area 47 X 47 MILS Top Side Metalization Al - 20,000Å Back Side Metalization Au - 10,000Å PROCESS DETAILS R8 (9 -September 2003) GEOMETRY BACKSIDE CATHODE
145 Adams Avenue
Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com GROSS DIE PER 4 INCH W AFER 5,110 Central Semiconductor Corp. TM PROCESS CP108 Schottky Rectifier Schottky Barrier Rectifier Chip - 2.0 Amp
Typical Electrical Characteristics Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R8 (9 -September 2003) Central Semiconductor Corp. TM